2024-03-22 18:49:55
A review published in the journal National Science Review summarizes the research of a team led by Prof. Huaxiang Yin (Institute of Microelectronics of Chinese Academy of Sciences). They systemically reviewed the development history of Si-based metal-oxide-semiconductor field-effect-transistors (MOSFETs), including the theory update, new materials introduction, key processes breakthrough, especially on device structure innovations for the development of advanced integrated circuits (ICs) in the past twenty years.